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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - ArraysDMN2016UTS-13
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DMN2016UTS-13Diodes Incorporated MOSFET 2N-CH 20V 8.58A 8-TSSOP
Part NumberDMN2016UTS-13
Package8-TSSOP (0.173", 4.40mm Width)
ManufacturerDiodes Incorporated
RoHs StatusROHS3 Compliant
Manufacturer Part NumberDiodes Incorporated-DMN2016UTS-13
DescriptionMOSFET 2N-CH 20V 8.58A 8-TSSOP
In stock64715
Data sheet
1.DMN2016UTS-13.pdf 2.DMN2016UTS-13.pdf 3.DMN2016UTS-13.pdf
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  • Specifications
  • Product Details - DMN2016UTS-13
  • DMN2016UTS-13 Tech Specifications
    Diodes Incorporated - DMN2016UTS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated - DMN2016UTS-13
    Manufacturer Diodes Incorporated
    Vgs(th) (Max) @ Id 1V @ 250µA
    Technology MOSFET (Metal Oxide)
    Supplier Device Package 8-TSSOP
    Series -
    Rds On (Max) @ Id, Vgs 14.5mOhm @ 9.4A, 4.5V
    Power - Max 880mW
    Package / Case 8-TSSOP (0.173", 4.40mm Width)
    Package Tape & Reel (TR)
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 1495pF @ 10V
    Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 4.5V
    FET Feature Logic Level Gate
    Drain to Source Voltage (Vdss) 20V
    Current - Continuous Drain (Id) @ 25°C 8.58A
    Configuration 2 N-Channel (Dual) Common Drain
    Base Product Number DMN2016
  • TheDMN2016UTS-13is a Discrete Semiconductor Products component, full developed and mass-produced by Diodes Incorporated manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET 2N-CH 20V 8.58A 8-TSSOP and it falls under the category of Transistors - FETs, MOSFETs - Arrays, with Manufacturer of Diodes Incorporated and Vgs(th) (Max) @ Id of 1V @ 250µA and Technology of MOSFET (Metal Oxide). Efficient purchasing through Diodes-Electronic.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for DMN2016UTS-13 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute DMN2019UTS-13 DMN2022UNS-13 DMN2016UFX-7 DMN2014LHAB-13
Part Number DMN2019UTS-13 DMN2022UNS-13 DMN2016UFX-7 DMN2014LHAB-13
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Series - * * *
Operating Temperature - - - -
Power - Max - - - -
Package / Case - - - -
FET Feature - - - -
Rds On (Max) @ Id, Vgs - - - -
Gate Charge (Qg) (Max) @ Vgs - - - -
Technology - - - -
Configuration - - - -
Input Capacitance (Ciss) (Max) @ Vds - - - -
Supplier Device Package - - - -
Mounting Type - - - -
Package - Bulk Bulk Bulk
Vgs(th) (Max) @ Id - - - -
Drain to Source Voltage (Vdss) - - - -
Current - Continuous Drain (Id) @ 25°C - - - -
Base Product Number - - - -
  • Diodes Incorporated Related Products
  • DMN2016UTS-13 Download Datasheets (3)

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Diodes Incorporated Diodes Incorporated Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. In November 2015, Pericom Semiconductor became ...
- Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. In November 2015, Pericom Semiconductor became a part of Diodes Incorporated strengthening its portfolio with serial high-speed switching, signal integrity, connectivity and timing solutions.
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